Product Summary
The TQM7M5005H is an extremely small (5 x 5 x 1 mm) multi-mode power amplifier module for GSM / EDGE applications. This module has been optimized for high EDGE efficiency and EDGE power class E2 operation while maintaining high GSM / GPRS efficiency. The module incorporates two highly integrated InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM operation. This eliminates the need for any external couplers, power detectors, current sensing or other components to assure the output power level. The latter is set directly from the Vramp input from the DAC. The module has Tx enable, band select, mode (EDGE or GSM) inputs. The applications of TQM7M5005H the include GSM/EDGE handsets, GSM/EDGE wireless cards & data links.
Parametrics
TQM7M5005H absolute maximum ratings: (1)Positive supply voltage: 3.0 to 4.5 V; (2)Input and output impedances: 50 Ω.
Features
TQM7M5005H features: (1)Very compact size - 5 x 5 x 1.0 mm; (2)High GSM efficiency - GSM 850 55%, GSM900 55%, DCS 49%, PCS 49%; (3)High EDGE efficiency - GSM 850 22%, GSM 900 22%, DCS 25%, PCS 24%; (4)Positive supply voltage - 3.0 to 4.5 V; (5)50 Ohm input and output impedances; (6)GPRS Class 12; (7)CMOS band select and internal closed-loop power control for GSM operation; (8)High-reliability InGaP technology; (9)Ruggedness 10:1; (10)No external Vref required.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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TQM7M5005H |
TriQuint Semiconductor |
RF Transceiver GSM850/900 Quad Band |
Data Sheet |
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