Product Summary
The TGA2522-SM is a three stage high power amplifier MMIC using TriQuint’s proven 0.25 um power pHEMT process. The TGA2522-SM is designed to support a variety of millimeter wave applications including point-to-point digital radio and other K band linear gain applications. The TGA2522-SM provides 26 dBm nominal output power at 1 dB compression across 17 - 24 GHz. Typical small signal gain is 17 dB at 17 GHz and 18 dB at 24 GHz. The TGA2522-SM requires minimum off-chip components. Each device is DC and RF tested for key parameters. The device is available in a 4 x 4 mm plastic QFN package that is lead-free and RoHS compliant. Evaluation boards are available on request. The applications of the TGA2522-SM include Point-to-Point Radio, Point-to-Multipoint Communications.
Parametrics
TGA2522-SM absolute maximum ratings: (1)Vd -Vg, Drain to Gate Voltage: 11 V; (2)Vd1,2, Drain Voltage: 8 V; (3)Vg1,2, Gate Voltage Range: -5 V to 0 V; (4)Vd3, Drain Voltage: 8 V; (5)Vg3, Gate Voltage Range: -5 V to 0 V; (6)Id1, 2, Drain Current: 1750 mA; (7)Id3, Drain Current: 1575 mA; (8)Ig1,2, Gate Current Range: 35 mA; (9)Ig3, Gate Current Range: 31.5 mA; (10)Pin, Input Continuous Wave Power: 26 dBm; (11)Tchannel, Channel Temperature: 200℃.
Features
TGA2522-SM features: (1)Frequency range: 17 to 24 GHz; (2)28 dBm Output Psat; (3)26 dBm P1dB typical; (4)35 dBm Output TOI; (5)17 dB typical gain; (6)Integrated power detection with 30 dB dynamic range; (7)High ESD tolerance; (8)Dimensions: 4.0 x 4.0 x 0.85 mm; (9)Bias conditions: Vd = 5 V, Id = 712 mA, Vg = -0.5 V, typical.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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TGA2522-SM-T/R |
TriQuint Semiconductor |
RF Amplifier 17 - 24 GHz Power Amplifier /AGC |
Data Sheet |
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Quantity | |||||||||||
TGA2501 |
TriQuint Semiconductor |
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Data Sheet |
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TGA2501-TS |
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TGA2503-EPU |
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TGA2503-SM |
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Data Sheet |
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