MT49H16M16FM-5

MT49H16M16FM-5, reduced latency DRAM (RLDRAM), 144FBGA, 2.63V, 17V, Micron Technology

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Price:: US $10.00~25.00 / piece [Get Latest Price]

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PartNumber:: MT49H16M16FM-5

Brand:: Micron Technology - MT | Pack: DIP | D/C: 10+

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Products Upload time: 2012-07-31

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Part Number:MT49H16M16FM-5
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Product Summary

The MT49H16M16FM-5 is a 256Mb Reduced Latency DRAM (RLDRAM) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format where the data is provided and synchronized with a differential echo clock signal. RLDRAM does not require row/column address multiplexing and is optimized for fast random access and high-speed bandwidth. The MT49H16M16FM-5 is designed for communication data storages like transmit or receive buffers in telecommunication systems as well as data or instruction cache applications requiring large amounts of memory.

Parametrics

MT49H16M16FM-5 absolute maximum ratings: (1)Storage Temperature: -55℃ to +150℃; (2)I/O Voltage: -0.3V to + VDDQ +0.3V; (3)Voltage on VEXT Supply Relative to VSS: -0.3V to +2.8V; (4)Voltage on VDD Supply Relative to VSS: -0.3V to +2.1V; (5)Voltage on VDDQ Supply Relative to VSS: -0.3V to +2.1V; (6)Junction Temperature: 100℃.

Features

MT49H16M16FM-5 features: (1)2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O; (2)Cyclic bank addressing for maximum data out bandwidth; (3)Non-multiplexed addresses; (4)Non-interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR; (5)Target 600 Mb/s/p data rate; (6)Programmable Read Latency (RL) of 5-8; (7)Data valid signal (DVLD) activated as read data is available; (8)Data Mask signals (DM0/DM1) to mask first and second part of write data burst; (9)IEEE 1149.1 compliant JTAG boundary scan; (10)Pseudo-HSTL 1.8V I/O Supply; (11)Internal Auto Precharge; (12)Refresh requirements: 32ms at 100℃ junction temperature (8K refresh for each bank, 64K refresh command must be issued in total each 32ms).